Analytic I–V Model for Single-Electron Transistors
نویسندگان
چکیده
منابع مشابه
An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
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چکیده ندارد.
15 صفحه اولQuantum criticality in ferromagnetic single-electron transistors.
Considerable evidence exists for the failure of the traditional theory of quantum critical points, pointing to the need to incorporate novel excitations. The destruction of Kondo entanglement and the concomitant critical Kondo effect may underlie these emergent excitations in heavy fermion metals (a prototype system for quantum criticality), but the effect remains poorly understood. Here, we sh...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 2001
ISSN: 1065-514X,1563-5171
DOI: 10.1155/2001/71879